Datasheet IXFH24N80P - IXYS MOSFET, N, TO-247

IXYS IXFH24N80P

Part Number: IXFH24N80P

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, TO-247

Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH 24N80P IXFK 24N80P IXFT 24N80P
VDSS = 800 V ID25 = 24 A RDS(on) 400 m trr 250 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight

Specifications:

Capacitance Ciss Typ: 5800 pF
Continuous Drain Current Id: 24 A
Current Id Max: 24 A
Drain Source Voltage Vds: 800 V
Junction to Case Thermal Resistance A: 0.19°C/W
Mounting Type: Through Hole
N-channel Gate Charge: 100nC
Number of Pins: 3
On State Resistance: 400 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: TO-247
Power Dissipation Pd: 650 W
Rds(on) Test Voltage Vgs: 10 V
Reverse Recovery Time trr Max: 250 ns
Threshold Voltage Vgs Typ: 5 V
Transistor Case Style: TO-247
Transistor Polarity: N Channel
Voltage Vds Typ: 800 V
Voltage Vgs Max: 30 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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