Datasheet IXFH26N60Q - IXYS MOSFET, N, TO-247
Part Number: IXFH26N60Q
Detailed Description
Manufacturer: IXYS
Description: MOSFET, N, TO-247
Docket:
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
IXFH 26N60Q IXFT 26N60Q
VDSS ID25 RDS(on)
Specifications:
- Avalanche Single Pulse Energy Eas: 1.5J
- Continuous Drain Current Id: 26 A
- Current Id Max: 26 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 600 V
- Full Power Rating Temperature: 25°C
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Mounting Type: Through Hole
- N-channel Gate Charge: 150nC
- Number of Pins: 3
- Number of Transistors: 1
- On State Resistance Max: 250 MOhm
- On State Resistance: 250 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: TO-247
- Power Dissipation Pd: 360 W
- Pulse Current Idm: 104 A
- Rate of Voltage Change dv / dt: 5V/ns
- Rds(on) Test Voltage Vgs: 10 V
- Repetitive Avalanche Energy Max: 45mJ
- Reverse Recovery Time trr Typ: 250 ns
- Threshold Voltage Vgs Typ: 4.5 V
- Transistor Case Style: TO-247
- Transistor Polarity: N Channel
- Transistor Type: MOSFET
- Voltage Vds Typ: 600 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 4.5 V
- Weight: 6 g
RoHS: Yes
Accessories:
- Fischer Elektronik - FK 243 MI 247 H
- Fischer Elektronik - FK 243 MI 247 O
- Fischer Elektronik - SK 145/25 STS-220
- Fischer Elektronik - WLK 5