Datasheet IXFH30N50P - IXYS MOSFET, N, TO-247

IXYS IXFH30N50P

Part Number: IXFH30N50P

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, TO-247

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Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS
VDSS ID25
RDS(on) trr

Specifications:

  • Capacitance Ciss Typ: 4150 pF
  • Continuous Drain Current Id: 30 A
  • Current Id Max: 30 A
  • Drain Source Voltage Vds: 500 V
  • Junction to Case Thermal Resistance A: 0.27°C/W
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 70nC
  • Number of Pins: 3
  • On State Resistance: 200 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-247
  • Power Dissipation Pd: 460 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Reverse Recovery Time trr Max: 200 ns
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: TO-247
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 500 V
  • Voltage Vgs Max: 30 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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