Datasheet IXFN64N60P - IXYS MOSFET, N, SOT-227B

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN 64N60P
VDSS ID25
RDS(on) trr

Specifications:

• Capacitance Ciss Typ: 12000 pF
• Continuous Drain Current Id: 64 A
• Current Id Max: 50 A
• Drain Source Voltage Vds: 600 V
• Junction to Case Thermal Resistance A: 0.18°C/W
• Mounting Type: Screw
• N-channel Gate Charge: 200nC
• Number of Pins: 4
• On State Resistance: 96 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: ISOTOP
• Power Dissipation Pd: 700 W
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Max: 200 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: ISOTOP
• Transistor Polarity: N Channel
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Panasonic - EYGA121807A
• SCHRODER - 20900