Datasheet IXFN80N50 - IXYS MOSFET, N, SOT-227B

IXYS IXFN80N50

Part Number: IXFN80N50

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

data sheetDownload Data Sheet

Docket:
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFN 80N50
D
VDSS ID25 RDS(on) trr

Specifications:

  • Avalanche Single Pulse Energy Eas: 4J
  • Continuous Drain Current Id: 80 A
  • Current Id Max: 80 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 500 V
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: Screw
  • N-channel Gate Charge: 380nC
  • Number of Pins: 4
  • Number of Transistors: 1
  • On State Resistance Max: 55 MOhm
  • On State Resistance: 55 MOhm
  • Package / Case: ISOTOP
  • Power Dissipation Pd: 780 W
  • Pulse Current Idm: 320 A
  • Rate of Voltage Change dv / dt: 5V/ns
  • Rds(on) Test Voltage Vgs: 10 V
  • Repetitive Avalanche Energy Max: 64mJ
  • Reverse Recovery Time trr Typ: 250 ns
  • Threshold Voltage Vgs Typ: 4.5 V
  • Transistor Case Style: ISOTOP
  • Transistor Polarity: N Channel
  • Transistor Type: MOSFET
  • Voltage Vds Typ: 500 V
  • Voltage Vgs Max: 4.5 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 4.5 V
  • Weight: 0.000036kg

RoHS: Yes

Accessories:

  • Panasonic - EYGA121807A
  • SCHRODER - 20900