Datasheet IXFN80N50 - IXYS MOSFET, N, SOT-227B
Part Number: IXFN80N50
Detailed Description
Manufacturer: IXYS
Description: MOSFET, N, SOT-227B
Docket:
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFN 80N50
D
VDSS ID25 RDS(on) trr
Specifications:
- Avalanche Single Pulse Energy Eas: 4J
- Continuous Drain Current Id: 80 A
- Current Id Max: 80 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 500 V
- Full Power Rating Temperature: 25°C
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Mounting Type: Screw
- N-channel Gate Charge: 380nC
- Number of Pins: 4
- Number of Transistors: 1
- On State Resistance Max: 55 MOhm
- On State Resistance: 55 MOhm
- Package / Case: ISOTOP
- Power Dissipation Pd: 780 W
- Pulse Current Idm: 320 A
- Rate of Voltage Change dv / dt: 5V/ns
- Rds(on) Test Voltage Vgs: 10 V
- Repetitive Avalanche Energy Max: 64mJ
- Reverse Recovery Time trr Typ: 250 ns
- Threshold Voltage Vgs Typ: 4.5 V
- Transistor Case Style: ISOTOP
- Transistor Polarity: N Channel
- Transistor Type: MOSFET
- Voltage Vds Typ: 500 V
- Voltage Vgs Max: 4.5 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 4.5 V
- Weight: 0.000036kg
RoHS: Yes
Accessories:
- Panasonic - EYGA121807A
- SCHRODER - 20900