Datasheet IXFT36N50P - IXYS MOSFET, N, TO-268
Part Number: IXFT36N50P
Detailed Description
Manufacturer: IXYS
Description: MOSFET, N, TO-268
Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS
VDSS ID25 trr
RDS(on)
Specifications:
- Capacitance Ciss Typ: 5500 pF
- Continuous Drain Current Id: 36 A
- Current Id Max: 36 A
- Drain Source Voltage Vds: 500 V
- Junction to Case Thermal Resistance A: 0.23°C/W
- Mounting Type: SMD
- N-channel Gate Charge: 93nC
- Number of Pins: 3
- On State Resistance: 170 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: TO-268
- Power Dissipation Pd: 540 W
- Rds(on) Test Voltage Vgs: 10 V
- Reverse Recovery Time trr Max: 200 ns
- Threshold Voltage Vgs Typ: 5 V
- Transistor Case Style: TO-268
- Transistor Polarity: N Channel
- Voltage Vds Typ: 500 V
- Voltage Vgs Max: 30 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
Accessories:
- Panasonic - EYGA091203SM
- Panasonic - EYGA121807A