Datasheet IXTK102N30P - IXYS MOSFET, N, TO-264
Part Number: IXTK102N30P
Detailed Description
Manufacturer: IXYS
Description: MOSFET, N, TO-264
Docket:
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTK 102N30P
VDSS = 300 V ID25 = 102 A RDS(on) 33 m
Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Specifications:
- Capacitance Ciss Typ: 7500 pF
- Continuous Drain Current Id: 102 A
- Current Id Max: 102 A
- Drain Source Voltage Vds: 300 V
- Junction to Case Thermal Resistance A: 0.18°C/W
- Mounting Type: Through Hole
- N-channel Gate Charge: 224nC
- Number of Pins: 3
- On State Resistance: 33 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: TO-264
- Power Dissipation Pd: 700 W
- Rds(on) Test Voltage Vgs: 10 V
- Reverse Recovery Time trr Max: 250 ns
- Threshold Voltage Vgs Typ: 5 V
- Transistor Case Style: TO-264
- Transistor Polarity: N Channel
- Voltage Vds Typ: 300 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
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