Datasheet IXTK120N25P - IXYS MOSFET, N, TO-264

IXYS IXTK120N25P

Part Number: IXTK120N25P

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, TO-264

Docket:
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTK 120N25P
VDSS = 250 V ID25 = 120 A RDS(on) 24 m
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight

Specifications:

Capacitance Ciss Typ: 8000 pF
Continuous Drain Current Id: 120 A
Current Id Max: 120 A
Drain Source Voltage Vds: 250 V
Junction to Case Thermal Resistance A: 0.18°C/W
Mounting Type: Through Hole
N-channel Gate Charge: 185nC
Number of Pins: 3
On State Resistance: 24 MOhm
Operating Temperature Range: -55°C to +175°C
Package / Case: TO-264
Power Dissipation Pd: 700 W
Rds(on) Test Voltage Vgs: 10 V
Reverse Recovery Time trr Max: 200 ns
Threshold Voltage Vgs Typ: 5 V
Transistor Case Style: TO-264
Transistor Polarity: N Channel
Voltage Vds Typ: 250 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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