Datasheet IXTK200N10P - IXYS MOSFET, N, TO-264
Part Number: IXTK200N10P
Detailed Description
Manufacturer: IXYS
Description: MOSFET, N, TO-264
Docket:
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTK 200N10P
VDSS = 100 V ID25 = 200 A RDS(on) 7.5 m
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Specifications:
- Capacitance Ciss Typ: 7600 pF
- Continuous Drain Current Id: 200 A
- Current Id Max: 200 A
- Drain Source Voltage Vds: 100 V
- Junction to Case Thermal Resistance A: 0.18°C/W
- Mounting Type: Through Hole
- N-channel Gate Charge: 240nC
- Number of Pins: 3
- On State Resistance: 7.5 MOhm
- Operating Temperature Range: -55°C to +175°C
- Package / Case: TO-264
- Power Dissipation Pd: 800 W
- Rds(on) Test Voltage Vgs: 15 V
- Reverse Recovery Time trr Max: 100 ns
- Threshold Voltage Vgs Typ: 5 V
- Transistor Case Style: TO-264
- Transistor Polarity: N Channel
- Voltage Vds Typ: 100 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
Accessories:
- Panasonic - EYGA091203SM
- Panasonic - EYGA121807A