Datasheet IXTQ170N10P - IXYS MOSFET, N, TO-3P
Part Number: IXTQ170N10P
Detailed Description
Manufacturer: IXYS
Description: MOSFET, N, TO-3P
Specifications:
- Capacitance Ciss Typ: 6000 pF
- Continuous Drain Current Id: 170 A
- Current Id Max: 170 A
- Drain Source Voltage Vds: 100 V
- Junction to Case Thermal Resistance A: 0.21°C/W
- Mounting Type: Through Hole
- N-channel Gate Charge: 198nC
- Number of Pins: 3
- On State Resistance: 9 MOhm
- Operating Temperature Range: -55°C to +175°C
- Package / Case: TO-3P
- Power Dissipation Pd: 714 W
- Rds(on) Test Voltage Vgs: 15 V
- Reverse Recovery Time trr Max: 120 ns
- Threshold Voltage Vgs Typ: 5 V
- Transistor Case Style: TO-3P
- Transistor Polarity: N Channel
- Voltage Vds Typ: 100 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
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