Datasheet IXTQ30N60L2 - IXYS MOSFET, N CH, 600 V, 30 A, TO-3P
Part Number: IXTQ30N60L2
Detailed Description
Manufacturer: IXYS
Description: MOSFET, N CH, 600 V, 30 A, TO-3P
Docket:
Preliminary Technical Information
Linear L2TM Power MOSFET with extended FBSOA
N-Channel Enhancement Mode Avalanche rated
IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2
VDSS ID25
Specifications:
- Current Id Max: 30 A
- Drain Source Voltage Vds: 600 V
- Number of Pins: 3
- On State Resistance: 240 MOhm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 540 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-3P
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
Accessories:
- BERGQUIST - 3223-07FR-104NH
- LAIRD TECHNOLOGIES - THER-T-LARGE
- Multicomp - MK3305
- ON Semiconductor - MC33153DG