Datasheet IXTQ88N30P - IXYS MOSFET, N, TO-3P

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, TO-3P

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Docket:
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P
VDSS ID25
RDS(on)

Specifications:

• Capacitance Ciss Typ: 6300 pF
• Continuous Drain Current Id: 88 A
• Current Id Max: 88 A
• Drain Source Voltage Vds: 300 V
• Junction to Case Thermal Resistance A: 0.21°C/W
• Mounting Type: Through Hole
• N-channel Gate Charge: 180nC
• Number of Pins: 3
• On State Resistance: 40 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-3P
• Power Dissipation Pd: 600 W
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Max: 250 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: TO-3P
• Transistor Polarity: N Channel
• Voltage Vds Typ: 300 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5
• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A