Datasheet IXFC110N10P - IXYS MOSFET, N, ISOPLUS220
Part Number: IXFC110N10P
Detailed Description
Manufacturer: IXYS
Description: MOSFET, N, ISOPLUS220
Docket:
PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM
(Electrically Isolated Back Surface)
IXFC 110N10P
VDSS = 100 V ID25 = 60 A RDS(on) 17 m trr 150 ns
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
Specifications:
- Capacitance Ciss Typ: 3550 pF
- Continuous Drain Current Id: 60 A
- Drain Source Voltage Vds: 100 V
- Isolation Voltage: 2.5 kV
- Mounting Type: Through Hole
- N-channel Gate Charge: 110nC
- On State Resistance: 17 MOhm
- Package / Case: ISOPLUS-220
- Power Dissipation Pd: 120 W
- Reverse Recovery Time trr Max: 150 ns
- Rth: 1.25
- Threshold Voltage Vgs Typ: 5 V
- Transistor Case Style: ISOPLUS-220
- Transistor Polarity: N Channel
- Voltage Vds Typ: 100 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
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- Panasonic - EYGA091203SM
- Panasonic - EYGA121807A