Datasheet IXFV18N60PS - IXYS MOSFET, N, SMD, PLUS220
Part Number: IXFV18N60PS
Detailed Description
Manufacturer: IXYS
Description: MOSFET, N, SMD, PLUS220
Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
IXFH 18N60P IXFV 18N60P IXFV 18N60PS
VDSS
ID25
Specifications:
- Capacitance Ciss Typ: 2500 pF
- Continuous Drain Current Id: 18 A
- Drain Source Voltage Vds: 600 V
- Junction to Case Thermal Resistance A: 0.35°C/W
- Mounting Type: SMD
- N-channel Gate Charge: 50nC
- Number of Pins: 3
- On State Resistance: 400 MOhm
- Package / Case: PLUS220
- Power Dissipation Pd: 360 W
- Reverse Recovery Time trr Max: 200 ns
- Threshold Voltage Vgs Typ: 5.5 V
- Transistor Case Style: PLUS220
- Transistor Polarity: N Channel
- Transistor Type: High Performance (HiPerFET)
- Voltage Vds Typ: 600 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes