Datasheet IXUC200N055 - IXYS MOSFET, N, ISOPLUS220
Part Number: IXUC200N055
Detailed Description
Manufacturer: IXYS
Description: MOSFET, N, ISOPLUS220
Docket:
ADVANCED TECHNICAL INFORMATION
Trench Power MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
IXUC200N055
Specifications:
- Continuous Drain Current Id: 200 A
- Drain Source Voltage Vds: 55 V
- Isolation Voltage: 2.5 kV
- Mounting Type: Through Hole
- N-channel Gate Charge: 44nC
- On State Resistance: 5.1 MOhm
- Package / Case: ISOPLUS-220
- Power Dissipation Pd: 300 W
- Reverse Recovery Time trr Max: 80 ns
- Rth: 0.5
- Threshold Voltage Vgs Typ: 4 V
- Transistor Case Style: ISOPLUS-220
- Transistor Polarity: N Channel
- Voltage Vds Typ: 55 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes