Datasheet BUK9Y11-30B - NXP MOSFET, N CH 30 V 75 A SOT669
Part Number: BUK9Y11-30B
Detailed Description
Manufacturer: NXP
Description: MOSFET, N CH 30 V 75 A SOT669
Docket:
BUK9Y11-30B
N-channel TrenchMOS logic level FET
Rev.
01 -- 30 August 2007 Product data sheet
1. Product profile
1.1 General description
Specifications:
- Continuous Drain Current Id: 59 A
- Current Id Max: 59 A
- Drain Source Voltage Vds: 30 V
- Mounting Type: SMD
- Number of Pins: 4
- On Resistance Rds(on): 9 MOhm
- Operating Temperature Range: -55°C to +175°C
- Package / Case: SOT-669
- Power Dissipation: 75 W
- Rds(on) Test Voltage Vgs: 10 V
- SVHC: No SVHC (19-Dec-2011)
- Threshold Voltage Vgs Typ: 1.5 V
- Transistor Case Style: SOT-669
- Transistor Polarity: N Channel
- Transistor Type: Enhancement
- Voltage Vds Typ: 30 V
- Voltage Vgs Max: 15 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Y-Ex
Other Names:
BUK9Y1130B, BUK9Y11 30B