Datasheet PH2925U - NXP MOSFET, N, 25 V, LFPAK

NXP PH2925U

Part Number: PH2925U

Detailed Description

Manufacturer: NXP

Description: MOSFET, N, 25 V, LFPAK

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Docket:
PH2925U
N-channel TrenchMOS ultra low level FET
Rev.

04 -- 24 February 2009 Product data sheet
1. Product profile
1.1 General description

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: 100 A
  • Current Id Max: 100 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 25 V
  • External Depth: 6.2 mm
  • External Length / Height: 1.2 mm
  • External Width: 5 mm
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: SMD
  • N-channel Gate Charge: 92nC
  • Number of Pins: 4
  • Number of Transistors: 1
  • On State Resistance @ Vgs = 4.5V: 2.3 MOhm
  • On State Resistance Max: 2.9 MOhm
  • On State Resistance: 2.3 MOhm
  • Operating Temperature Range: -55°C to +150пїЅпїЅC
  • Package / Case: SOT-669
  • Power Dissipation Pd: 62.5 W
  • Pulse Current Idm: 300 A
  • Rds(on) Test Voltage Vgs: 4.5 V
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: 700 mV
  • Transistor Case Style: SOT-669
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 25 V
  • Voltage Vgs Max: 10 V
  • Voltage Vgs Rds on Measurement: 4.5 V
  • Voltage Vgs th Min: 0.45 V

RoHS: Yes