Datasheet PH2925U - NXP MOSFET, N, 25 V, LFPAK
Part Number: PH2925U
Detailed Description
Manufacturer: NXP
Description: MOSFET, N, 25 V, LFPAK
Docket:
PH2925U
N-channel TrenchMOS ultra low level FET
Rev.
04 -- 24 February 2009 Product data sheet
1. Product profile
1.1 General description
Specifications:
- Continuous Drain Current Id: 100 A
- Current Id Max: 100 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 25 V
- External Depth: 6.2 mm
- External Length / Height: 1.2 mm
- External Width: 5 mm
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Mounting Type: SMD
- N-channel Gate Charge: 92nC
- Number of Pins: 4
- Number of Transistors: 1
- On State Resistance @ Vgs = 4.5V: 2.3 MOhm
- On State Resistance Max: 2.9 MOhm
- On State Resistance: 2.3 MOhm
- Operating Temperature Range: -55°C to +150пїЅпїЅC
- Package / Case: SOT-669
- Power Dissipation Pd: 62.5 W
- Pulse Current Idm: 300 A
- Rds(on) Test Voltage Vgs: 4.5 V
- SVHC: No SVHC (18-Jun-2010)
- Threshold Voltage Vgs Typ: 700 mV
- Transistor Case Style: SOT-669
- Transistor Polarity: N Channel
- Voltage Vds Typ: 25 V
- Voltage Vgs Max: 10 V
- Voltage Vgs Rds on Measurement: 4.5 V
- Voltage Vgs th Min: 0.45 V
RoHS: Yes