Datasheet PH8230E - NXP MOSFET, N, 30 V, LFPAK
Part Number: PH8230E
Detailed Description
Manufacturer: NXP
Description: MOSFET, N, 30 V, LFPAK
Docket:
PH8230E
N-channel TrenchMOSTM enhanced logic level FET
M3D748
Rev.
03 -- 02 March 2004
Product data
Specifications:
- Continuous Drain Current Id: 67 A
- Current Id Max: 67 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 30 V
- External Depth: 6.2 mm
- External Length / Height: 1.2 mm
- External Width: 5 mm
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Mounting Type: SMD
- N-channel Gate Charge: 14nC
- Number of Pins: 4
- On State Resistance @ Vgs = 4.5V: 11 Ohm
- On State Resistance Max: 8.2 Ohm
- On State Resistance: 7.6 Ohm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SOT-669
- Power Dissipation Pd: 62.5 W
- Pulse Current Idm: 268 A
- Rds(on) Test Voltage Vgs: 4.5 V
- SVHC: No SVHC (18-Jun-2010)
- Threshold Voltage Vgs Typ: 1.7 V
- Transistor Case Style: SOT-669
- Transistor Polarity: N Channel
- Voltage Vds Typ: 30 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Min: 1 V
RoHS: Yes
Accessories:
- LICEFA - V11-7-6-10
- LICEFA - V11-7