Datasheet MTD6N15T4G - ON Semiconductor N CHANNEL MOSFET, 150 V, 6 A, D-PAK
Part Number: MTD6N15T4G
Detailed Description
Manufacturer: ON Semiconductor
Description: N CHANNEL MOSFET, 150 V, 6 A, D-PAK
Docket:
MTD6N15 Power Field Effect Transistor DPAK for Surface Mount
N-Channel Enhancement-Mode Silicon Gate
This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features
V(BR)DSS 150 V
Specifications:
- Continuous Drain Current Id: 6 A
- Drain Source Voltage Vds: 150 V
- On Resistance Rds(on): 300 MOhm
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 4.5 V
- Transistor Polarity: N Channel
RoHS: Y-Ex