Datasheet STD2HNK60Z-1 - STMicroelectronics MOSFET, N, I-PAK

Detailed Description

Manufacturer: STMicroelectronics

Description: MOSFET, N, I-PAK

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Docket:
STD2HNK60Z - STD2HNK60Z-1 STF2HNK60Z - STQ2HNK60ZR-AP
N-channel 600V - 4.4 - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESHTM Power MOSFET
General features
Type STD2HNK60Z STD2HNK60Z-1 STF2HNK60Z STQ2HNK60ZR-AP
VDSS 600V 600V 600V 600V

Specifications:

• Avalanche Single Pulse Energy Eas: 120mJ
• Capacitance Ciss Typ: 280 pF
• Continuous Drain Current Id: 2 A
• Current Iar: 2 A
• Current Id Max: 2 A
• Drain Source Voltage Vds: 600 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Junction to Case Thermal Resistance A: 2.77°C/W
• Mounting Type: Through Hole
• Number of Pins: 3
• On State Resistance: 4.8 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: IPAK
• Power Dissipation Pd: 45 W
• Pulse Current Idm: 8 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 3.75 V
• Transistor Case Style: I-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4.5 V
• Voltage Vgs th Min: 3 V

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 244 13 D PAK
• Fischer Elektronik - WLK 5
• Panasonic - EYGA121807A
• Roth Elektronik - RE901

Other Names:

STD2HNK60Z1, STD2HNK60Z 1