Datasheet STQ1HNK60R-AP - STMicroelectronics MOSFET N CH 600 V 0.4 A TO92

Detailed Description

Manufacturer: STMicroelectronics

Description: MOSFET N CH 600 V 0.4 A TO92

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Docket:
STD1NK60 - STD1NK60-1
STQ1HNK60R - STN1HNK60
N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESHTM MOSFET
Table 1: General Features
TYPE STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60

Specifications:

• Continuous Drain Current Id: 500 mA
• Current Id Max: 400 mA
• Drain Source Voltage Vds: 600 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On State Resistance: 8 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-92
• Power Dissipation Pd: 3 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-92
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Other Names:

STQ1HNK60RAP, STQ1HNK60R AP