Datasheet SI4559ADY-T1-E3 - Vishay MOSFET, N/P, SO-8
Part Number: SI4559ADY-T1-E3
Detailed Description
Manufacturer: Vishay
Description: MOSFET, N/P, SO-8
Docket:
Si4559ADY
Vishay Siliconix
N- and P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () 0.058 at VGS = 10 V 0.072 at VGS = 4.5 V 0.120 at VGS = - 10 V 0.150 at VGS = - 4.5 V ID (A)a Qg (Typ.) 5.3 4.7 - 3.9 - 3.5 6 nC 8 nC
Specifications:
- Cont Current Id N Channel: 5.3 A
- Cont Current Id P Channel: 3.9 A
- Current Id Max: 4.3 A
- Drain Source Voltage Vds: 60 V
- Junction Temperature Tj Min: 150°C
- Mounting Type: SMD
- Number of Pins: 8
- On State Resistance @ Vgs = 10V N Channel: 58 MOhm
- On State Resistance @ Vgs = 10V P Channel: 120 MOhm
- On State Resistance @ Vgs = 4.5V N Channel: 72 MOhm
- On State Resistance @ Vgs = 4.5V P Channel: 150 MOhm
- Package / Case: SOIC-8
- Power Dissipation N Channel 2: 3.1 W
- Power Dissipation P Channel 2: 3.4 W
- Power Dissipation Pd: 2 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: SOIC
- Transistor Polarity: N and P Channel
- Voltage Vds Typ: 60 V
- Voltage Vgs Max: 3 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th N Channel 1 Min: 1 V
- Voltage Vgs th P Channel Max: 3 V
- Voltage Vgs th P Channel Min: 1 V
RoHS: Yes
Accessories:
- Panasonic - EYGA091203SM
- Panasonic - EYGA121807A
Other Names:
SI4559ADYT1E3, SI4559ADY T1 E3