Datasheet SI4442DY-T1-E3 - Vishay TRANSISTOR, MOSFET
Part Number: SI4442DY-T1-E3
Detailed Description
Manufacturer: Vishay
Description: TRANSISTOR, MOSFET
Docket:
Si4442DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.0045 at VGS = 10 V 0.005 at VGS = 4.5 V 0.0075 at VGS = 2.5 V ID (A) 22 19 17
Specifications:
- Continuous Drain Current Id: 22 A
- Current Id Max: 22 A
- Drain Source Voltage Vds: 30 V
- Mounting Type: SMD
- Number of Pins: 8
- On Resistance Rds(on): 4.5 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SOIC
- Power Dissipation: 3.5 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 1.5 V
- Transistor Case Style: SOIC
- Transistor Polarity: N Channel
- Voltage Vds Typ: 30 V
- Voltage Vgs Max: 1.5 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Y-Ex
Other Names:
SI4442DYT1E3, SI4442DY T1 E3