Datasheet SI4446DY-T1-GE3 - Vishay N CH MOSFET
Part Number: SI4446DY-T1-GE3
Detailed Description
Manufacturer: Vishay
Description: N CH MOSFET
Specifications:
- Continuous Drain Current Id: 3.9 A
- Drain Source Voltage Vds: 40 V
- On Resistance Rds(on): 33 MOhm
- Power Dissipation Pd: 1.1 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 1.6 V
- Transistor Polarity: N Channel
RoHS: Yes
Other Names:
SI4446DYT1GE3, SI4446DY T1 GE3