Datasheet IRF7555PBF - International Rectifier MOSFET, DUAL, PP, MICRO-8

International Rectifier IRF7555PBF

Part Number: IRF7555PBF

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, DUAL, PP, MICRO-8

data sheetDownload Data Sheet

Docket:
PD -91865B
IRF7555
HEXFET® Power MOSFET
Trench Technology q Ultra Low On-Resistance q Dual P-Channel MOSFET q Very Small SOIC Package q Low Profile (<1.1mm) q Available in Tape & Reel
q

Specifications:

  • Continuous Drain Current Id: 4.3 A
  • Current Id Max: -4.3 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 20 V
  • External Depth: 5.03 mm
  • External Length / Height: 1.11 mm
  • External Width: 3.05 mm
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Lead Spacing: 0.65 mm
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 8
  • Number of Transistors: 2
  • On Resistance Rds(on): 55 MOhm
  • On State Resistance Max: 55 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: Micro8
  • Power Dissipation Pd: 1.25 W
  • Pulse Current Idm: 34 A
  • Rds(on) Test Voltage Vgs: -4.5 V
  • Row Pitch: 4.24 mm
  • SMD Marking: 7555
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: -1.2 V
  • Transistor Case Style: MicroSOIC
  • Transistor Polarity: P Channel
  • Voltage Vds Typ: -20 V
  • Voltage Vds: 20 V
  • Voltage Vgs Rds on Measurement: 4.5 V
  • Voltage Vgs th Min: -0.6 V

RoHS: Yes

Accessories:

  • LICEFA - V11-7-6-10
  • LICEFA - V11-7
  • Roth Elektronik - RE903