Datasheet IRF7555PBF - International Rectifier MOSFET, DUAL, PP, MICRO-8
Part Number: IRF7555PBF
Detailed Description
Manufacturer: International Rectifier
Description: MOSFET, DUAL, PP, MICRO-8
Docket:
PD -91865B
IRF7555
HEXFET® Power MOSFET
Trench Technology q Ultra Low On-Resistance q Dual P-Channel MOSFET q Very Small SOIC Package q Low Profile (<1.1mm) q Available in Tape & Reel
q
Specifications:
- Continuous Drain Current Id: 4.3 A
- Current Id Max: -4.3 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 20 V
- External Depth: 5.03 mm
- External Length / Height: 1.11 mm
- External Width: 3.05 mm
- Full Power Rating Temperature: 25°C
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Lead Spacing: 0.65 mm
- Module Configuration: Dual
- Mounting Type: SMD
- Number of Pins: 8
- Number of Transistors: 2
- On Resistance Rds(on): 55 MOhm
- On State Resistance Max: 55 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: Micro8
- Power Dissipation Pd: 1.25 W
- Pulse Current Idm: 34 A
- Rds(on) Test Voltage Vgs: -4.5 V
- Row Pitch: 4.24 mm
- SMD Marking: 7555
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: -1.2 V
- Transistor Case Style: MicroSOIC
- Transistor Polarity: P Channel
- Voltage Vds Typ: -20 V
- Voltage Vds: 20 V
- Voltage Vgs Rds on Measurement: 4.5 V
- Voltage Vgs th Min: -0.6 V
RoHS: Yes
Accessories:
- LICEFA - V11-7-6-10
- LICEFA - V11-7
- Roth Elektronik - RE903