Datasheet SI4501ADY-T1-GE3 - Vishay DUAL N/P CHANNEL MOSFET, 30 V, SOIC

Detailed Description

Manufacturer: Vishay

Description: DUAL N/P CHANNEL MOSFET, 30 V, SOIC

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Docket:
Si4501ADY
Vishay Siliconix
Complementary (N- and P-Channel) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel P-Channel 30 -8 RDS(on) () 0.018 at VGS = 10 V 0.027 at VGS = 4.5 V 0.042 at VGS = - 4.5 V 0.060 at VGS = - 2.5 V ID (A) 8.8 7.0 - 5.7 - 4.8

Specifications:

• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 42 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 1.3 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Polarity: N and P Channel

RoHS: Y-Ex

Other Names:

SI4501ADYT1GE3, SI4501ADY T1 GE3