Datasheet RH1028M, RH1128M (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | Radiation Hardened Ultralow Noise Precision High Speed Op Amps |
| Pages / Page | 6 / 3 — tAble 1A: electricAl chArActeristics. (Postirradiation) VS = ±15V, VCM = … |
| File Format / Size | PDF / 282 Kb |
| Document Language | English |
tAble 1A: electricAl chArActeristics. (Postirradiation) VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted
Model Line for this Datasheet
Text Version of Document
RH1028M/RH1128M
tAble 1A: electricAl chArActeristics (Postirradiation) VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) SYMBOL PARAMETER CONDTIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage 2 100 120 140 160 180 µV IOS Input Offset Current 200 200 200 300 500 nA IB Input Bias Current ±600 ±700 ±950 ±1100 ±1700 nA SR Slew Rate AVCL = –1 (RH1028) 7.5 7.5 7.5 7.5 7.5 V/µs AVCL = –1 (RH1128) 3.0 3.0 3.0 3.0 3.0 V/µs Input Voltage Range ±11 ±11 ±11 ±11 ±11 V CMRR Common Mode Rejection VCM = ±11V 106 106 106 106 106 dB Ratio PSRR Power Supply Rejection VS = ±4V to ±18V 104 104 104 104 104 dB Ratio AVOL Large-Signal Voltage Gain RL ≥ 2k, VO = ±10V 2 2 2 2 2 V/µV VOUT Maximum Output Voltage RL ≥ 2k ±11.5 ±11.5 ±11.5 ±11.5 ±11.5 V Swing RL ≥ 600Ω ±10 ±10 ±10 ±10 ±10 V
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 5:
10Hz noise voltage density is sample tested on every lot. Devices may cause permanent damage to the device. Exposure to any Absolute 100% tested at 10Hz are available on request. Maximum Rating condition for extended periods may affect device
Note 6:
Current noise is defined and measured with balanced source reliability and lifetime. resistors. The resultant voltage noise (after subtracting the resistor noise
Note 2:
Input offset voltage measurements are performed by automatic on an RMS basis) is divided by the sum of the two source resistors to test equipment approximately 0.5 seconds after application of power. In obtain current noise. Maximum 10Hz current noise can be inferred from addition, at TA = 25°C, offset voltage is measured with the chip heated 100% testing at 1kHz. to approximately 55°C to account for the chip temperature rise when the
Note 7:
Gain-bandwidth product is not tested. It is guaranteed by design device is fully warmed up. and by inference from the slew rate measurement.
Note 3:
Long-term input offset voltage stability refers to the average trend
Note 8:
This parameter is not 100% tested. line of Offset Voltage vs Time over extended periods after the first 30 days
Note 9:
The inputs are protected by back-to-back diodes. Current-limiting of operation. Excluding the initial hour of operation, changes in VOS during resistors are not used in order to achieve low noise. If differential input the first 30 days are typically 2.5µV. voltage exceeds ±1.8V, the input current should be limited to 25mA.
Note 4:
This parameter is tested on a sample basis only. rh10281128fe For more information www.linear.com/RH1028M 3 Document Outline Description Electrical Characteristics
tAble 1A: electricAl chArActeristics (Postirradiation) VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) SYMBOL PARAMETER CONDTIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage 2 100 120 140 160 180 µV IOS Input Offset Current 200 200 200 300 500 nA IB Input Bias Current ±600 ±700 ±950 ±1100 ±1700 nA SR Slew Rate AVCL = –1 (RH1028) 7.5 7.5 7.5 7.5 7.5 V/µs AVCL = –1 (RH1128) 3.0 3.0 3.0 3.0 3.0 V/µs Input Voltage Range ±11 ±11 ±11 ±11 ±11 V CMRR Common Mode Rejection VCM = ±11V 106 106 106 106 106 dB Ratio PSRR Power Supply Rejection VS = ±4V to ±18V 104 104 104 104 104 dB Ratio AVOL Large-Signal Voltage Gain RL ≥ 2k, VO = ±10V 2 2 2 2 2 V/µV VOUT Maximum Output Voltage RL ≥ 2k ±11.5 ±11.5 ±11.5 ±11.5 ±11.5 V Swing RL ≥ 600Ω ±10 ±10 ±10 ±10 ±10 V
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 5:
10Hz noise voltage density is sample tested on every lot. Devices may cause permanent damage to the device. Exposure to any Absolute 100% tested at 10Hz are available on request. Maximum Rating condition for extended periods may affect device
Note 6:
Current noise is defined and measured with balanced source reliability and lifetime. resistors. The resultant voltage noise (after subtracting the resistor noise
Note 2:
Input offset voltage measurements are performed by automatic on an RMS basis) is divided by the sum of the two source resistors to test equipment approximately 0.5 seconds after application of power. In obtain current noise. Maximum 10Hz current noise can be inferred from addition, at TA = 25°C, offset voltage is measured with the chip heated 100% testing at 1kHz. to approximately 55°C to account for the chip temperature rise when the
Note 7:
Gain-bandwidth product is not tested. It is guaranteed by design device is fully warmed up. and by inference from the slew rate measurement.
Note 3:
Long-term input offset voltage stability refers to the average trend
Note 8:
This parameter is not 100% tested. line of Offset Voltage vs Time over extended periods after the first 30 days
Note 9:
The inputs are protected by back-to-back diodes. Current-limiting of operation. Excluding the initial hour of operation, changes in VOS during resistors are not used in order to achieve low noise. If differential input the first 30 days are typically 2.5µV. voltage exceeds ±1.8V, the input current should be limited to 25mA.
Note 4:
This parameter is tested on a sample basis only. rh10281128fe For more information www.linear.com/RH1028M 3 Document Outline Description Electrical Characteristics
