Datasheet LT1806, LT1807 (Analog Devices) - 4
| Manufacturer | Analog Devices |
| Description | 325MHz, Single, Rail-to-Rail Input and Output, Low Distortion, Low Noise Precision Op Amps |
| Pages / Page | 28 / 4 — ELECTRICAL CHARACTERISTICS |
| File Format / Size | PDF / 346 Kb |
| Document Language | English |
ELECTRICAL CHARACTERISTICS
Model Line for this Datasheet
Text Version of Document
LT1806/LT1807
ELECTRICAL CHARACTERISTICS TA = 25°C. VS = 5V, 0V; VS = 3V, 0V; VSHDN = open; VCM = VOUT = half supply, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
ISC Short-Circuit Current VS = 5V ±35 ±85 mA VS = 3V ±30 ±65 mA IS Supply Current per Amplifi er 9 13 mA Disable Supply Current VS = 5V, VSHDN = 0.3V 0.40 0.9 mA VS = 3V, VSHDN = 0.3V 0.22 0.7 mA ISHDN SHDN Pin Current VS = 5V, VSHDN = 0.3V 150 350 μA VS = 3V, VSHDN = 0.3V 100 300 μA Shutdown Output Leakage Current VSHDN = 0.3V 0.1 75 μA VL SHDN Pin Input Voltage LOW 0.3 V VH SHDN Pin Input Voltage HIGH V+ – 0.5 V tON Turn-On Time VSHDN = 0.3V to 4.5V, RL = 100Ω 80 ns tOFF Turn-Off Time VSHDN = 4.5V to 0.3V, RL = 100Ω 50 ns GBW Gain-Bandwidth Product Frequency = 6MHz 325 MHz SR Slew Rate VS = 5V, AV = –1, RL = 1k, VO = 4V 125 V/μs FPBW Full-Power Bandwidth VS = 5V, VOUT = 4VP-P 10 MHz HD Harmonic Distortion VS = 5V, AV = 1, RL = 1k, VO = 2VP-P, fC = 5MHz –78 dBc tS Settling Time 0.01%, VS = 5V, VSTEP = 2V, AV = 1, RL = 1k 60 ns ΔG Differential Gain (NTSC) VS = 5V, AV = 2, RL = 150 0.015 % Δθ Differential Phase (NTSC) VS = 5V, AV = 2, RL = 150 0.05 Deg
The
l
denotes the specifi cations which apply over the 0°C < TA < 70°C temperature range. VS = 5V, 0V; VS = 3V, 0V; VSHDN = open; VCM = VOUT = half supply, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage VCM = V+ l 200 700 μV VCM = V– l 200 700 μV VCM = V+ (LT1806 SOT-23) l 200 850 μV VCM = V– (LT1806 SOT-23) l 200 850 μV VOS TC Input Offset Voltage Drift (Note 8) VCM = V+ l 1.5 5 μV/°C VCM = V– l 1.5 5 μV/°C ΔV l OS Input Offset Voltage Shift VCM = V– to V+ 100 700 μV VCM = V– to V+ (LT1806 SOT-23) l 100 850 μV Input Offset Voltage Match (Channel-to-Channel) VCM = V–, VCM = V+ l 300 1200 μV (Note 10) IB Input Bias Current VCM = V+ – 0.2V l 1 5 μA VCM = V– + 0.4V l –15 –5 μA ΔIB Input Bias Current Shift VCM = V– + 0.4V to V+ – 0.2V l 6 20 μA 18067fc 4
ELECTRICAL CHARACTERISTICS TA = 25°C. VS = 5V, 0V; VS = 3V, 0V; VSHDN = open; VCM = VOUT = half supply, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
ISC Short-Circuit Current VS = 5V ±35 ±85 mA VS = 3V ±30 ±65 mA IS Supply Current per Amplifi er 9 13 mA Disable Supply Current VS = 5V, VSHDN = 0.3V 0.40 0.9 mA VS = 3V, VSHDN = 0.3V 0.22 0.7 mA ISHDN SHDN Pin Current VS = 5V, VSHDN = 0.3V 150 350 μA VS = 3V, VSHDN = 0.3V 100 300 μA Shutdown Output Leakage Current VSHDN = 0.3V 0.1 75 μA VL SHDN Pin Input Voltage LOW 0.3 V VH SHDN Pin Input Voltage HIGH V+ – 0.5 V tON Turn-On Time VSHDN = 0.3V to 4.5V, RL = 100Ω 80 ns tOFF Turn-Off Time VSHDN = 4.5V to 0.3V, RL = 100Ω 50 ns GBW Gain-Bandwidth Product Frequency = 6MHz 325 MHz SR Slew Rate VS = 5V, AV = –1, RL = 1k, VO = 4V 125 V/μs FPBW Full-Power Bandwidth VS = 5V, VOUT = 4VP-P 10 MHz HD Harmonic Distortion VS = 5V, AV = 1, RL = 1k, VO = 2VP-P, fC = 5MHz –78 dBc tS Settling Time 0.01%, VS = 5V, VSTEP = 2V, AV = 1, RL = 1k 60 ns ΔG Differential Gain (NTSC) VS = 5V, AV = 2, RL = 150 0.015 % Δθ Differential Phase (NTSC) VS = 5V, AV = 2, RL = 150 0.05 Deg
The
l
denotes the specifi cations which apply over the 0°C < TA < 70°C temperature range. VS = 5V, 0V; VS = 3V, 0V; VSHDN = open; VCM = VOUT = half supply, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage VCM = V+ l 200 700 μV VCM = V– l 200 700 μV VCM = V+ (LT1806 SOT-23) l 200 850 μV VCM = V– (LT1806 SOT-23) l 200 850 μV VOS TC Input Offset Voltage Drift (Note 8) VCM = V+ l 1.5 5 μV/°C VCM = V– l 1.5 5 μV/°C ΔV l OS Input Offset Voltage Shift VCM = V– to V+ 100 700 μV VCM = V– to V+ (LT1806 SOT-23) l 100 850 μV Input Offset Voltage Match (Channel-to-Channel) VCM = V–, VCM = V+ l 300 1200 μV (Note 10) IB Input Bias Current VCM = V+ – 0.2V l 1 5 μA VCM = V– + 0.4V l –15 –5 μA ΔIB Input Bias Current Shift VCM = V– + 0.4V to V+ – 0.2V l 6 20 μA 18067fc 4
