Datasheet 2N3019, 2N3019S, 2N3700 (ON Semiconductor) - 4

ManufacturerON Semiconductor
DescriptionNPN Silicon Low Power Transistors
Pages / Page4 / 4 — 2N3019, 2N3019S, 2N3700. PACKAGE DIMENSIONS. TO−18 3−Lead. DETAIL X. …
Revision2
File Format / SizePDF / 110 Kb
Document LanguageEnglish

2N3019, 2N3019S, 2N3700. PACKAGE DIMENSIONS. TO−18 3−Lead. DETAIL X. SEATING. A PLANE. MILLIMETERS. INCHES. NOTE 5. DIM. MIN. MAX. NOTE 7

2N3019, 2N3019S, 2N3700 PACKAGE DIMENSIONS TO−18 3−Lead DETAIL X SEATING A PLANE MILLIMETERS INCHES NOTE 5 DIM MIN MAX NOTE 7

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2N3019, 2N3019S, 2N3700 PACKAGE DIMENSIONS TO−18 3−Lead
CASE 206AA ISSUE A
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
A DETAIL X
2. CONTROLLING DIMENSION: INCHES.
B
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
U P C
PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
U
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­
L SEATING
SIONS A, B, AND T.
R A PLANE F K MILLIMETERS INCHES NOTE 5 DIM MIN MAX MIN MAX E A
5.31 5.84 0.209 0.230
B
4.52 4.95 0.178 0.195
T C
4.32 5.33 0.170 0.210
NOTE 7 D
0.41 0.53 0.016 0.021
DETAIL X 3X D E
--- 0.76 --- 0.030
NOTES 4 & 6 F
0.41 0.48 0.016 0.019 0.007 (0.18MM) A B S C M
H
0.91 1.17 0.036 0.046
J
0.71 1.22 0.028 0.048
K
12.70 19.05 0.500 0.750
N L
6.35 --- 0.250 ---
H M
45 BSC 45 BSC
2
_ _
N
2.54 BSC 0.100 BSC
1 3 P
--- 1.27 --- 0.050
R
1.37 BSC 0.054 BSC
M J T
--- 0.76 --- 0.030
U
2.54 --- 0.100 ---
LEAD IDENTIFICATION DETAIL
STYLE 1:
C
PIN 1. EMITTER 2. BASE 3. COLLECTOR
ON Semiconductor
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