Datasheet BAT46 (STMicroelectronics) - 3

ManufacturerSTMicroelectronics
DescriptionSmall signal Schottky diodes
Pages / Page11 / 3 — BAT46 Series. Characteristics. Figure 1. Average forward power …
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Document LanguageEnglish

BAT46 Series. Characteristics. Figure 1. Average forward power dissipation Figure 2. Average forward current versus

BAT46 Series Characteristics Figure 1 Average forward power dissipation Figure 2 Average forward current versus

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BAT46 Series Characteristics Figure 1. Average forward power dissipation Figure 2. Average forward current versus versus average forward current ambient temperature (
δ
= 1) P(W) I (A) F(AV) 0.12 0.16
δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1
0.14 0.10 0.12 0.08 0.10 0.06 0.08 0.06 0.04
T T
0.04 0.02
δ
0.02
=tp/T tp δ=tp/T tp
IF(AV)(A) Tamb(°C) 0.00 0.00 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0 25 50 75 100 125 150 Figure 3. Reverse leakage current versus Figure 4. Reverse leakage current versus reverse applied voltage (typical junction temperature values) IR(µA) IR(µA) 1.E+03 1.E+04
V =75 V Tj=125 °C R
1.E+03 1.E+02
Tj=100 °C
1.E+02
Tj=75 °C
1.E+01 1.E+01
Tj=50 °C
1.E+00 1.E+00
Tj=25 °C
1.E-01 T V j(°C) R(V) 1.E-01 1.E-02 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 150 Figure 5. Junction capacitance versus Figure 6. Forward voltage drop versus reverse applied voltage (typical forward current (typical values, values) low-level) C(pF) IFM(mA) 12 20
F=1 MHz V =30 mV OSC RMS
18 10
Tj=25 °C
16 14 8 12
Tj=125 °C Tj=25 °C
6 10 8 4 6 4 2 2 V V R(V) FM(V) 0 0 0 10 20 30 40 50 60 70 80 90 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6
3/11 Document Outline BAT46 Series Small signal Schottky diodes 1 Characteristics Table 1. Absolute ratings (limiting values at Tj = 25˚ C, unless otherwise specified) Table 2. Thermal parameters Table 3. Static electrical characteristics Table 4. Dynamic characteristics Figure 1. Average forward power dissipation versus average forward current Figure 2. Average forward current versus ambient temperature (d = 1) Figure 3. Reverse leakage current versus reverse applied voltage (typical values) Figure 4. Reverse leakage current versus junction temperature Figure 5. Junction capacitance versus reverse applied voltage (typical values) Figure 6. Forward voltage drop versus forward current (typical values, low-level) Figure 7. Forward voltage drop versus forward current (typical values, high-level) Figure 8. Relative variation of thermal impedance junction to ambient versus pulse duration - printed circuit board, epoxy FR4 eCU = 35 µm (SOD-323) Figure 9. Relative variation of thermal impedance junction to ambient versus pulse duration - aluminium oxide substrate 10 mm x 8 mm x 0.5 mm (SOT-23) Figure 10. Variation of thermal impedance junction to ambient versus pulse duration - printed circuit board, epoxy FR4, eCU = 35 µm (SOT-323) Figure 11. Thermal resistance junction to ambient versus copper surface under each lead, epoxy FR4, eCU = 35 µm (SOD-323) 2 Ordering information scheme 3 Package information Table 5. SOD-123 dimensions Figure 12. SOD-123 footprint (dimensions in mm) Table 6. SOD-323 dimensions Figure 13. SOD-323 footprint (dimensions in mm) Table 7. SOT-23 dimensions Figure 14. SOT-23 footprint (dimensions in mm) Table 8. SOT-323 dimensions Figure 15. SOT-323 footprint (dimensions in mm) 4 Ordering information 5 Revision history
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