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Datasheet NGD18N40ACLBT4G - ON Semiconductor IGBT, IGNITION, N-CH, 400 V, 18 A, DPAK

ON Semiconductor NGD18N40ACLBT4G

Part Number: NGD18N40ACLBT4G

Detailed Description

Manufacturer: ON Semiconductor

Description: IGBT, IGNITION, N-CH, 400 V, 18 A, DPAK

data sheetDownload Data Sheet

NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V
N-Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.


  • Collector Emitter Voltage V(br)ceo: 400 V
  • Collector Emitter Voltage Vces: 1.8 V
  • DC Collector Current: 18 A
  • Number of Pins: 3
  • Operating Temperature Range: -55C to +175C
  • Power Dissipation: 115 W
  • Transistor Case Style: TO-252
  • Transistor Type: IGBT
  • RoHS: Yes
  • SVHC: No SVHC (19-Dec-2011)

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