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Datasheet NTE292MCP - NTE Electronics TRANSISTOR, NPN & PNP, 120 V, 4 A, MCP

NTE Electronics NTE292MCP

Part Number: NTE292MCP

Manufacturer: NTE Electronics

Description: TRANSISTOR, NPN & PNP, 120 V, 4 A, MCP

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Docket:
NTE291 (NPN) & NTE292 (PNP) Silicon Complementary Transistors Medium Power Amp, Switch
Description: The NTE291 (NPN) and NTE292 (PNP) are General­Purpose Medium­Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of high­fidelity amplifiers. Features: D Low Saturation Voltage Absolute Maximum Ratings: Collector­to­Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V Collector­to­Emitter Voltage (RBB = 100, VBB = 0), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V Collector­to­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter­To­Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

  • Collector Emitter Voltage V(br)ceo: 120 V
  • DC Collector Current: 4 A
  • DC Current Gain: 2
  • Operating Temperature Range: -65°C to +150°C
  • Power Dissipation: 40 W
  • Transistor Polarity: NPN & PNP

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