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Datasheet SGW25N120 - Infineon IGBT, NPT, 1200 V, 46 A, 313 W, TO247-3

Infineon SGW25N120

Part Number: SGW25N120

Manufacturer: Infineon

Description: IGBT, NPT, 1200 V, 46 A, 313 W, TO247-3

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Fast IGBT in NPT-technology
40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : Type SGW25N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Gate-emitter voltage Avalanche energy, single pulse IC = 25A, VCC = 50V, RGE = 25, start at Tj = 25C Short circuit withstand time2 VGE = 15V, 100V VCC 1200V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj ,


  • Collector Emitter Voltage V(br)ceo: 1.2 kV
  • Collector Emitter Voltage Vces: 3.1 V
  • DC Collector Current: 46 A
  • Number of Pins: 3
  • Operating Temperature Range: -55C to +150C
  • Power Dissipation: 313 W
  • Pulsed Current Icm: 84 A
  • Rise Time: 52 ns
  • Transistor Case Style: TO-247
  • Transistor Type: IGBT
  • RoHS: Yes

    Price SGW25N120
    AliExpressSGW25N120 G25N120 G25T120 TO3P0,70 $
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