Datasheet NXP BF862

Datasheet NXP BF862

N-channel junction FET


Datasheet BF862
PDF, 239 Kb, Language: en, File uploaded: Jul 31, 2016, Pages: 11
N-channel junction FET


book, halfpage M3D088 BF862 N-channel junction FET
Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 NXP Semiconductors Product specification N-channel junction FET
FEATURES High transition frequency for excellent sensitivity in AM car radios High transfer admittance. APPLICATIONS Pre-amplifiers in AM car radios.
handbook, halfpage 2 BF862
PINNING SOT23 PIN 1 2 3 source drain gate DESCRIPTION 1 DESCRIPTION Silicon N-channel symmetrical junction field-effect transistor in a SOT23 package. Drain and source are interchangeable.
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Marking code: 2Ap.
MAM036 g d s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff IDSS Ptot yfs Tj PARAMETER drain-source voltage gate-source cut-off voltage drain-source current total power dissipation transfer admittance junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. Ts 90 C CONDITIONS MIN. 0.3 10 35 TYP. 0.8 45 MAX. 20 1.2 25 300 150 UNIT V V mA mW mS C 2000 Jan 05 2 NXP Semiconductors Product specification N-channel junction FET
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VDG VGS IDS IG Ptot Tstg Tj Note 1. Main heat transfer is via the gate lead. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Soldering point of the gate lead. PARAMETER thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 200 PARAMETER drain-source voltage drain-gate voltage gate-source voltage drain-source current forward gate current total power dissipation storage temperature junction temperature Ts 90 C; note 1 CONDITIONS MIN. 65 BF862 MAX. 20 20 20 40 10 300 +150 150 UNIT V V V mA mA mW C C UNIT K/W handbook, halfpage 400 MCD808 Ptot (mW) 300 200 10...

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