Datasheet IXDR35N60BD1 - IXYS IGBT, ISOPLUS247

Detailed Description

Manufacturer: IXYS

Description: IGBT, ISOPLUS247

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Docket:
IGBT with optional Diode
High Speed, Low Saturation Voltage
IXDR 35N60 BD1 VCES = 600 V = 38 A IC25 VCE(sat) typ = 2.2 V
C G
ISOPLUS 247TM

Specifications:

• Transistor Type: NPT
• Max Voltage Vce Sat: 2.7 V
• Transistor Case Style: ISOPLUS-247
• Case Style: ISOPLUS-247
• Fall Time Tf: 70 ns
• Junction to Case Thermal Resistance A: 1°C/ W
• Max Current Ic Continuous a: 38 A
• Pin Configuration: Copack (FRD)
• Power Dissipation: 125 W
• Rise Time: 70 ns
• Termination Type: Through Hole
• Transistor Polarity: NPN
• Voltage Vces: 600 V

RoHS: Yes