2N6661
N-Channel, Enhancement-Mode, Vertical DMOS FET
Features Description 2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process. This combination produces a device with the power-handling
capabilities of bipolar transistors, and the high input
impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown. Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain Applications Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers: relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc. Vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where verylow threshold voltage, high breakdown voltage, highinput impedance, low-input capacitance, and fast
switching speeds are desired. Package Types GATE
SOURCE
DRAIN TO-39
Case: Drain …
