Datasheet Microchip VN2106N3-G
| Manufacturer | Microchip |
| Series | VN2106 |
| Part Number | VN2106N3-G |
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process
Datasheets
VN2106 Datasheet - N-Channel Enhancement-Mode Vertical DMOS FET
PDF, 474 Kb, Revision: 12-23-2008
Extract from the document
Status
| Lifecycle Status | Production (Appropriate for new designs but newer alternatives may exist) |
Packaging
| Package | TO-92 |
| Pins | 3 |
Parametrics
| BVdss min | 60 V |
| CISSmax | 50 pF |
| Operating Temperature Range | -55 to +150 °C |
| Rds | 4.0 on) max |
| Vgs(th) max | 2.4 V |
Eco Plan
| RoHS | Compliant |
Model Line
Series: VN2106 (1)
- VN2106N3-G
Other Names:
VN2106N3G, VN2106N3 G