Datasheet Microchip VN2106
| Manufacturer | Microchip |
| Series | VN2106 |
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process
Datasheets
VN2106 Datasheet - N-Channel Enhancement-Mode Vertical DMOS FET
PDF, 474 Kb, Revision: 12-23-2008
Extract from the document
Status
| VN2106N3-G | |
|---|---|
| Lifecycle Status | Production (Appropriate for new designs but newer alternatives may exist) |
Packaging
| VN2106N3-G | |
|---|---|
| N | 1 |
| Package | TO-92 |
| Pins | 3 |
Parametrics
| Parameters / Models | VN2106N3-G |
|---|---|
| BVdss min, V | 60 |
| CISSmax, pF | 50 |
| Operating Temperature Range, °C | -55 to +150 |
| Rds, on) max | 4.0 |
| Vgs(th) max, V | 2.4 |
Eco Plan
| VN2106N3-G | |
|---|---|
| RoHS | Compliant |
Model Line
Series: VN2106 (1)