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Datasheet Intersil HCTS20KMSR

ManufacturerIntersil
SeriesHCTS20MS
Part NumberHCTS20KMSR

CMOS Dual 4-Input NAND Gate

Datasheets

  • Download » Datasheet, PDF, 328 Kb, Revision: 2017-12-19
    HCTS20MS Datasheet
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    DATASHEET
    HCTS20MS FN3051
    Rev 1.00
    September 1995 Radiation Hardened Dual 4-Input NAND Gate Features Pinouts 3 Micron Radiation Hardened SOS CMOS
    Total Dose 200K RAD (Si)
    SEP Effective LET No Upsets: >100 MEV-cm2/mg
    Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
    Bit-Day (Typ)
    Dose Rate Survivability: >1 x 1012 RAD (Si)/s
    Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
    Latch-Up Free Under Any Conditions
    Military Temperature Range: -55oC to +125oC
    Significant Power Reduction Compared to LSTTL ICs
    DC Operating Voltage Range: 4.5V to 5.5V
    LSTTL Input Compatibility
    -VIL = 0.8V Max
    -VIH = VCC/2 Min
    Input Current Levels Ii п‚Ј 5пЃ­A at VOL, VOH Description
    The Intersil HCTS20MS is a Radiation Hardened Dual 4Input NAND Gate. A low on any input forces the output to a
    High state.
    The HCTS20MS utilizes advanced CMOS/SOS technology
    to achieve high-speed operation. This device is a member of
    radiation hardened, high-speed, CMOS/SOS Logic Family. ...

Prices

Packaging

Package14 Ld CFP
Package IndexK14.A

Parametrics

ClassV
DLA SMD5962-95733
DescriptionCMOS Dual 4-Input NAND Gate
High Dose Rate (HDR) krad(Si)200
Low Dose Rate (ELDRS) krad(Si)ELDRS free
Operating Temperature Range-55 to 125
Qualification LevelQML Class V (space)
SEL (MeV/mg/cm2)SEL free

Eco Plan

RoHSCompliant

Moldel Line

Series: HCTS20MS (1)
  • HCTS20KMSR

Manufacturer's Classification

  • Space & Harsh Environment > Rad Hard Digital > RH NAND Gates
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