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Datasheet ON Semiconductor MMBF4393

N-Channel Switch

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  N-Channel Switch
  Docket ↓
  MMBF4391 / MMBF4392 / MMBF4393
  N-Channel Switch
  Description
  G This device is designed for low level analog switching, sample and hold circuits and chopper stabalized
  amplifiers. Sourced from process 51. See J111 for
  characteristics. S
  SOT-23 D Note: Source & Drain
  are interchangeable Ordering Information
  Part Number Top Mark Package Packing Method MMBF4391 6J SOT-23 3L Tape and Reel MMBF4392 6K SOT-23 3L Tape and Reel MMBF4393 6G SOT-23 3L Tape and Reel Absolute Maximum Ratings(1), (2)
  Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
  absolute maximum ratings are stress ratings only. Values are at TA = 25В°C unless otherwise noted. Symbol Parameter Value Unit VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 50 mA -55 to 150 В°C TJ, TSTG Operating and Storage Junction Temperature Range Notes:
  1. These ratings are based on a maximum junction temperature of 150В°C.
  2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
  low-duty-cycle operations. В© 1997 Fairchild Semiconductor Corporation
  MMBF4391 / MMBF4392 / MMBF4393 Rev. 1.3 www.fairchildsemi.com MMBF4391 / MMBF4392 / MMBF4393 — N-Channel Switch January 2015 Values are at TA = 25°C unless otherwise noted. Symbol
  PD
  RОёJA Parameter Max. Unit Total Device Dissipation 350 mW Derate Above 25В°C 2.8 mW/В°C Thermal Resistance, Junction-to-Ambient 357 В°C/W Note:
  3. Device mounted on FR-4 PCB 36mm Г— 18mm Г— 1.5mm; mounting pad for the collector lead minimum 6cm2. Electrical Characteristics
  Values are at TA = 25В°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics
  V(BR)GSS
  IGSS VGS(off)
  VGS(f) ID(off) Gate-Source Breakdown Voltage IG = 1.0 ОјA, VDS = 0
  Gate Reverse Current Gate-Source Cut-Off Voltage ...

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• Discrete > IGBTs & FETs > JFETs