Datasheet ON Semiconductor MMBF4393 N-Channel Switch Datasheets- Download » Datasheet, PDF, 289 Kb, Revision: A
N-Channel Switch Docket ↓MMBF4391 / MMBF4392 / MMBF4393 N-Channel Switch Description G This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from process 51. See J111 for characteristics. S SOT-23 D Note: Source & Drain are interchangeable Ordering Information Part Number Top Mark Package Packing Method MMBF4391 6J SOT-23 3L Tape and Reel MMBF4392 6K SOT-23 3L Tape and Reel MMBF4393 6G SOT-23 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 50 mA -55 to 150 °C TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 1997 Fairchild Semiconductor Corporation MMBF4391 / MMBF4392 / MMBF4393 Rev. 1.3 www.fairchildsemi.com MMBF4391 / MMBF4392 / MMBF4393 — N-Channel Switch January 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Max. Unit Total Device Dissipation 350 mW Derate Above 25°C 2.8 mW/°C Thermal Resistance, Junction-to-Ambient 357 °C/W Note: 3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)GSS IGSS VGS(off) VGS(f) ID(off) Gate-Source Breakdown Voltage IG = 1.0 μA, VDS = 0 Gate Reverse Current Gate-Source Cut-Off Voltage ...
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StatusLifecycle Status | Active (Recommended for new designs) |
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PackagingPackage | SOT-23-3 |
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Package Code | 318-08 |
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Eco PlanCompliance | Pb-free | Halide free |
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Manufacturer's Classification- Discrete > IGBTs & FETs > JFETs
Related datasheets: - Datasheet MMBF4393LT1G - ON Semiconductor TRANSISTOR, JFET, N, 30 V, SOT-23
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- Datasheet 2N4393-E3 - Vishay TRANSISTORS - JFET
- Datasheet MMBF4392 - Fairchild N CHANNEL JFET, -30 V, SOT-23
- Datasheet MMBF5459 - Fairchild N CHANNEL JFET, -25 V, SOT-23
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