Datasheet Diodes DGTD65T40S2PT
| Manufacturer | Diodes |
| Series | DGTD65T40S2PT |
| Part Number | DGTD65T40S2PT |
650V Field Stop IGBT In TO247
Datasheets
Datasheet DGTD65T40S2PT
PDF, 1.4 Mb, Language: en, File uploaded: Mar 26, 2019, Pages: 9
650V Field Stop IGBT In TO247
650V Field Stop IGBT In TO247
Extract from the document
Detailed Description
The DGTD65T40S2PT is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high switching performance.
Parametrics
| IGBT Type | Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 230 W |
| Input Type | Standard |
| Gate Charge | 60 nC |
| Reverse Recovery Time (trr) | 60 ns |
| Operating Temperature | -40~175 °C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3  |
| Product Status | Obsolete |
| Packaging | Tube |
Packaging
| Package | TO247 (Type MC) |
Parametrics
| Anti Parallel Diode | Yes |
| EOFF typ @ +25°C | 0.4 mJ |
| EON typ @ +25°C | 0.5 mJ |
| IC @ +100°C | 40 A |
| IC @ +25°C | 80 A |
| Power Dissipation @ TC = +25°C | 230 W |
| VCE(sat) max @ +25°C | 2.3 V |
| VCE(sat) typ @ +25°C | 1.8 V |
| VCES | 650 V |
Manufacturer's Classification
- Discrete > IGBTs