Datasheet Analog Devices HMC313ETR

HMC313 / 313E
v07.0418 DRIVER &GAIN BLOCK AMPLIFIERS -SMT GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC -6 GHz
Typical Applications Features Ideal as a Driver & Amplifier for: P1dB Output Power: +14 dBm • 2.2 -2.7 GHz MMDS Output IP3: +27 dBm • 3.5 GHz Wireless Local Loop Gain: 17 dB • 5 -6 GHz UNII & HiperLAN Single Supply: +5V
High Reliability GaAs HBT Process
Ultra Small Package: SOT26
Included in the HMC-DK001 Designer’s Kit General Description Functional Diagram The HMC313 & HMC313E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC
amplifiers that operate from a single Vcc supply.
The surface mount SOT26 amplifier can be used
as a broadband gain stage or used with external
matching for optimized narrow band applications.
With Vcc biased at +5V, the HMC313(E) offers 17 dB
of gain and +15 dBm of saturated power while only
requiring 50 mA of current. Electrical Specifications, TA = +25 °C, Vcc = +5.0V
Parameter Vcc = +5V
Min. Frequency Range
Gain Typ. Max. DC -6
14 Gain Variation Over Temperature
Input Return Loss Units
GHz 17 20 dB 0.02 0.03 dB/°C 7 dB Output Return Loss 6 dB Reverse Isolation 30 dB 14 dBm 15 dBm 27 dBm Output Power for 1 dB Compression (P1dB) @ 1.0 GHz 11 Saturated Output Power (Psat) @ 1.0 GHz
Output Third Order Intercept (IP3) @ 1.0 GHz 24 Noise Figure 6.5 dB Supply Current (Icc) 50 mA Note: Data taken with broadband bias tee on device output. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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