Datasheet STMicroelectronics MASTERGAN2

ManufacturerSTMicroelectronics
SeriesMASTERGAN2
Part NumberMASTERGAN2

High power density 600V Half bridge driver with two enhancement mode GaN HEMT

Datasheets

Datasheet MASTERGAN2
PDF, 1.6 Mb, Language: en, File uploaded: Feb 7, 2021, Pages: 29
High power density 600V Half bridge driver with two enhancement mode GaN HEMT
Extract from the document

Prices

Detailed Description

The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.

The integrated power GaNs have 650 V drain‑source breakdown voltage and RDS(ON) of 150 mΩ and 225 mΩ for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
The MASTERGAN2 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.
The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.
The MASTERGAN2 operates in the industrial temperature range, -40°C to 125°C.
The device is available in a compact 9x9 mm QFN package.

Status

Lifecycle StatusActive (Recommended for new designs)

Packaging

PackageVFQFPN 9X9X1.0 31L PITCH 0.6MM

Model Line

Series: MASTERGAN2 (2)

Manufacturer's Classification

  • Power Management > Gate Drivers > High Voltage Half Bridge Gate Drivers

$2 Start Your PCB and SMT. Get coupon code: JLCNY

0$ for 10pcs PCB. Register to get $100 free coupons