Datasheet Analog Devices HMC-APH634-DIE

HMC-APH634
v01.0713 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 81 -86 GHz Typical Applications Features This HMC-APH634 is ideal for: High Gain: 12 dB • Short Haul / High Capacity Links High P1dB: +19 dBm • Test & Measurement Bias Supply: +4V • E-Band Communication Systems 50 Ohm Matched Input/Output LINEAR & POWER AMPLIFIERS -CHIP Die Size: 2.57 x 1.70 x 0.05 mm General Description Functional Diagram The HMC-APH634 is a two stage GaAs HEMT MMIC
Medium Power Amplifier which operates between
81 and 86 GHz. The HMC-APH634 provides 12
dB of gain, and an output power of up to +20 dBm
at 1 dB compression from a +4V supply. All bond
pads and the die backside are Ti/Au metallized.
The HMC-APH634 GaAs HEMT MMIC Medium
Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it
ideal for MCM and hybrid microcircuit applications.
All data shown herein is measured with the chip in
a 50 Ohm environment and contacted with RF probes. Electrical Specifications, TA = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 240mA [2]
Parameter Min. Frequency Range
Gain 7 Typ. Max. Units 81 -86 GHz 12 dB Input Return Loss 7 dB Output Return Loss 8 dB Output power for 1dB Compression (P1dB) 19 dBm Supply Current (Idd1+Idd2) 240 mA [1] Unless otherwise indicated, all measurements are from probed die.
[2] Adjust Vgg1=Vgg2 between -0.8V to +0.3V (typ. -0.1V) to achieve Iddtotal = 240mA 1 For price,
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