Datasheet Analog Devices HMC376

HMC376LP3 / 376LP3E
v01.0610 AMPLIFIERS -LOW NOISE -SMT 7 GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 -1000 MHz Typical Applications Features The HMC376LP3 / HMC376LP3E is ideal for: Noise Figure: 0.7 dB • Cellular/3G Infrastructure Output IP3: +36 dBm • Base Stations & Repeaters Gain: 15 dB • CDMA, W-CDMA, & TD-SCDMA Externally Adjustable Supply Current • Private Land Mobile Radio Single Positive Supply: +5V • GSM/GPRS & EDGE 50 Ohm Matched Input/Output • UHF Reallocation Applications Functional Diagram General Description
The HMC376LP3 & HMC376LP3E are GaAs PHEMT
MMIC Low Noise Amplifiers that are ideal for GSM
& CDMA cellular basestation front-end receivers
operating between 700 and 1000 MHz. The amplifier
has been optimized to provide 0.7 dB noise figure,
15 dB gain and +36 dBm output IP3 from a single
supply of +5V. The HMC376LP3(E) feature an
externally adjustable supply current which allows the
designer to tailor the linearity performance of the LNA
for each application. For applications which require
improved noise figure, please see the HMC617LP3(E). Electrical Specifi cations, TA = +25° C, Vdd = +5V, Rbias = 10 Ohms*
Parameter Min. Frequency Range
Gain Typ. Max. Min. 810 -960
12.5 Gain Variation Over Temperature Typ. Max. 700 -1000 14.5 11.5 Units
MHz 14.5 dB 0.005 0.01 0.005 0.01 dB / °C Noise Figure 0.7 1.0 0.7 1.0 dB Input Return Loss 13 14 dB Output Return Loss 12 12 dB Reverse Isolation
Output Power for 1dB Compression (P1dB) 20 22 dB 21.5 21 dBm Saturated Output Power (Psat) 22 22 dBm Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing) 36 36 dBm Supply Current (Idd) 73 73 mA *Rbias resistor value sets current, see application circuit herein. 7-1 For price,
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