Datasheet Analog Devices HMC-APH462

HMC-APH462
v03.0209 LINEAR & POWER AMPLIFIERS -CHIP 3 GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 15 -27 GHz Typical Applications Features This HMC-APH462 is ideal for: Output IP3: +37 dBm • Point-to-Point Radios P1dB: +29 dBm • Point-to-Multi-Point Radios Gain: 17 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output
Die Size: 3.70 x 2.62 x 0.1 mm General Description Functional Diagram The HMC-APH462 is a high dynamic range, two stage
GaAs HEMT MMIC 0.8 Watt Power Amplifier which
operates between 15 and 27 GHz. The HMC-APH462
provides 17 dB of gain, and an output power of +29
dBm at 1 dB compression from a +5V supply voltage.
All bond pads and the die backside are Ti/Au metallized
and the amplifier device is fully passivated for reliable
operation. The HMC-APH462 GaAs HEMT MMIC 1
Watt Power Amplifier is compatible with conventional
die attach methods, as well as thermocompression
and thermosonic wire bonding, making it ideal for
MCM and hybrid microcircuit applications. All data
Shown herein is measured with the chip in a 50 Ohm
environment and contacted with RF probes. Electrical Specifi cations[1]
TA = +25° C, Vdd1 = Vdd2 = Vdd3 = Vdd4 = 5V, Idd1 + Idd2 + Idd3 + Idd4 = 1440 mA [2]
Parameter Min. Frequency Range
Gain Typ. Max. Min. 15 -17
12 16 13 Typ. Max. Units 17 -27 GHz 17 dB Input Return Loss 15 18 dB Output Return Loss 15 18 dB 29 dBm Output power for 1dB Compression (P1dB) 26 Output Third Order Intercept (IP3) 34 37 1440 1440 Supply Current (Idd1+Idd2 + Idd3 + Idd4) 27 mA [1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2=Vgg3=Vgg4 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 + Idd4 = 480 mA, Idd2 + Idd3 = 960 mA 3 -178 For price,
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