PDF, 479 Kb, Language: en, File uploaded: Mar 5, 2021, Pages: 8
InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz
Extract from the document
HMC461LP3 / 461LP3E
v02.0705 11 InGaP HBT 1 Watt High IP3
AMPLIFIER, 1.7 -2.2 GHz Typical Applications Features A high linearity 1 watt amplifier for: +45 dBm Output IP3 (Balanced Configuration) • Multi-Carrier Systems 12 dB Gain • GSM, GPRS & EDGE 48% PAE @ +30.5 dBm Pout • CDMA & W-CDMA +20 dBm W-CDMA Channel Power @ -45 dBc ACP • PHS 3x3 mm QFN SMT Package • Balanced or Push-Pull Configurable LINEAR & POWER AMPLIFIERS -SMT Functional Diagram General Description
The HMC461LP3 & HMC461LP3E are 1.7 -2.2 GHz
high output IP3 GaAs InGaP Heterojunction Bipolar
Transistor (HBT) dual-channel MMIC amplifiers.
The linear performance of two HMC455LP3 high
IP3 drivers is offered in this single IC which can be
configured in a balanced or push-pull amplifier circuit.
The amplifier provides 12 dB of gain and +30.5 dBm
of saturated power at 48% PAE from a single +5 Vdc
supply while utilizing external baluns in a balanced
configuration. The high output IP3 of +45 dBm coupled
with the low VSWR of 1.2:1 make the HMC461LP3
& HMC461LP3E ideal driver amplifiers for PCS/3G
wireless infrastructures. A low cost, leadless 3x3 mm
QFN surface mount package (LP3) houses the dual
MMIC amplifier IC. The LP3 provides an exposed
base for excellent RF and thermal performance. Electrical Specifi cations*, TA = +25° C, Vs= +5V
Parameter Min. Frequency Range
Gain Typ. Max. Min. 1.7 -1.9
10 Gain Variation Over Temperature 12.5
0.012 Typ. Max. 1.9 -2.2 …
