Datasheet ON Semiconductor TIP121

TIP120, TIP121, TIP122
(NPN); TIP125, TIP126,
TIP127 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors www.onsemi.com Designed for general−purpose amplifier and low−speed switching
applications.
Features • High DC Current Gain − = 2500 (Typ) @ IC
= 4.0 Adc
Collector−Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125
= 80 Vdc (Min) − TIP121, TIP126
= 100 Vdc (Min) − TIP122, TIP127
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
= 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
Pb−Free Packages are Available*
hFE • •
•
• DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON …

Equivalent Circuit
C Features
• Medium Power Linear Switching Applications
• Complementary to TIP125 / TIP126 / TIP127 B R1 TO-220 1 1.Base 2.Collector 3.Emitter R2 R1 ≅ 8kΩ
R2 ≅ 0.12kΩ E Ordering Information
Part Number Top Mark Package Packing Method TIP120 TIP120 TO-220 3L (Single Gauge) Bulk TIP120TU TIP120 TO-220 3L (Single Gauge) Rail TIP121 TIP121 TO-220 3L (Single Gauge) Bulk TIP121TU TIP121 TO-220 3L (Single Gauge) Rail TIP122 TIP122 TO-220 3L (Single Gauge) Bulk TIP122TU TIP122 TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol
VCBO Parameter
Collector-Base Voltage Value
TIP120 60 TIP121 80 TIP122 100 TIP120 60 TIP121 80 TIP122 100 Unit
V VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 8 A IB Base Current (DC) 120 mA TJ Junction Temperature 150 °C -65 to 150 °C TSTG Storage Temperature Range © 2001 Semiconductor Components Industries, LLC.
November-2017, Rev.2 Publication Order Number:
TIP122/D TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor TIP120 / TIP121 / TIP122
NPN Epitaxial Darlington Transistor Values are at TC = 25°C unless otherwise noted. Symbol
PC Parameter Value Collector Dissipation (TA = 25°C) 2 Collector Dissipation (TC = 25°C) 65 Unit
W Electrical Characteristics
Values are at TC = 25°C unless otherwise noted. Symbol Parameter Conditions VCEO(sus) ICEO Collector-Emitter Sustaining
TIP121
Voltage
TIP122
Collector Cut-Off Current ICBO Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE DC Current Gain(1) Max. IC = 100 mA, IB = 0 Unit 80 V 100 TIP120 VCE = 30 V, IB = 0 0.5 TIP121 VCE = 40 V, IB = 0 0.5 TIP122 VCE = 50 V, IB = 0 0.5 TIP120 VCB = 60 V, IE = 0 0.2 TIP121 VCB = 80 V, IE = 0 0.2 TIP122 VCB = 100 V, IE = 0 0.2 VEB = 5 V, IC = 0 2 VCE = 3 V, IC = 0.5 A 1000 VCE = 3 V, IC = 3 A 1000 mA mA
mA IC = 3 A, IB = 12 mA 2.0 IC = 5 A, IB = 20 mA 4.0 Base-Emitter On Voltage(1) VCE = 3 V, IC = 3 A 2.5 V Output Capacitance VCB = 10 V, IE = 0, …