KSD2012 KSD2012
Low Frequency Power Amplifier
• Complement to KSB1366 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO Collector-Base Voltage Parameter Value
60 Units
V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base Current 0.3 A PC Collector Power Dissipation (TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C 60 V 7 V 3 A Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO Parameter
Collector-Emitter Breakdown Voltage Test Condition
IC = 50mA, IB = 0 Min.
60 Typ. Max. ICBO Collector Cut-off Current VCB = 60V, IE = 0 100 µA IEBO Emitter Cut-off Current VEB = 7V, IC = 0 10 µA h FE1
hFE2 DC Current Gain VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A 100
20 Units
V 320 VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.4 1 VBE(on) Base-Emitter ON Voltage VCE = 5V, IC = 0.5A 0.7 1 fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A 3 V
V
MHz hFE Classification
Classification Y G hFE1 100 ~ 200 150 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD2012 Typical Characteristics 1000 mA
90 mA
I B = = 80
IB …
