Datasheet GT15Q301 - Toshiba IGBT, 1200 V, TO-3P(N)

Detailed Description

Manufacturer: Toshiba

Description: IGBT, 1200 V, TO-3P(N)

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Specifications:

• Transistor Type: HP SW IGBT
• Max Voltage Vce Sat: 2.7 V
• Collector-to-Emitter Breakdown Voltage: 1200 V
• Transistor Case Style: TO-3P (N)
• Number of Pins: 3
• Case Style: TO-3P (N)
• Max Current Ic Continuous a: 15 A
• Pin Format: GCE
• Power Dissipation: 170 W
• Power Dissipation Pd: 170 W
• Pulsed Current Icm: 30 A
• Rise Time: 50 ns
• Termination Type: Through Hole
• Transistor Polarity: N
• Voltage Vces: 1200 V

RoHS: Yes

Accessories:

• Fischer Elektronik - AKK 191
• Fischer Elektronik - FK 201SA-3
• Fischer Elektronik - TF 3 2
• Fischer Elektronik - WLK 5